Metallization is backend processing metals used are aluminum and copper mainly involves deposition and etching, also planarization similar but typically less complicated process flows as in frontend processing. With nearly a century of experience in the plating industry, we are prepared to. Wafer fabrication is the property of its rightful owner. Metallization chemical vapor deposition sputtering. Figure 7 wire bond to alsi cu metallization using the old bonding schedule. Cmp process has been developed through equipment, functional slurries and pad, disk. Design rules for solar cells with plated metallization. Cu metallization problems iii 18 voids in cu metallization the deposited copper barrier was unable to cover in the nitride recessed area, which was.
Copper interconnect technology stanford university. Post cleaning chemical of tungsten chemical mechanical. Current status and advances in damascene electrodeposition. Various approaches have been studied in order to plate high aspect ratio ar through holes with improved microdistribution and improved mechanical properties of the plated copper such as tensile strength and elongation. The only fly in the ointment is the need for a barrier. The number of w cmp steps is increasing with the introduction of vnand. Electroplating is a process that requires skill, experience and the right equipment. Such metals may remain in elemental or native free state in nature. Electroplating defects and issues sharretts plating company. Capping and diffusion barriers of copper metallization prof. Any duplication, disclosure, distribution, dissemination or. Download as ppt, pdf, txt or read online from scribd.
In order to obviate this problem, a liner or barrier metal is needed to. Cu is a noble metal and, as such, readily diffuses through dielectrics. Electromigration of flip chip solder joints snpb vs. Physical vapour deposition an overview sciencedirect. Ppt chapter 2 introduction of ic fabrication powerpoint.
Times new roman tahoma arial narrow arial wingdings comic sans ms default design slide 1 issues in vlsi metallization slide 3 multilevel metal connections slide 5 silicide contacts slide 7 salicide selfaligned silicide layer multilevel metallization plug filling chemical mechanical polishing cmp damascene processes dual damascene slide. Electromigration is the transport of material caused by the gradual movement of the ions in a conductor due to the momentum transfer between conducting electrons and diffusing metal atoms. Spc is an industry leader in consulting on plating. Ultralargescale integrated ulsi circuits, with 108 or more devices on a chip, can now be fabricated on semiconductor substrates, or wafers. The light al can gain enough energy to be above its evaporation temperature when it hits the wafer. Capping and diffusion barriers of copper metallization. Creating the conductive layer by cu plating is a cheap alternative with screen printing sharp contours are hard to achieve using pastes with less bleeding. Beol interconnect innovations for improving performance paul besser, phd formerly senior technology director at lam research currently director of emerging technologies at arm february 23, 2017 paul besser, nccavs symposium in san jose, ca. Bohr, interconnect scaling the real limiter to high performance ulsi i995 international electron devices meeting technical digest, 1995 241244. Figure 8 wire bond to alsi cu metallization using the revised bonding schedule. The effect is important in applications where high direct current densities are used, such as in microelectronics and related structures. Barrier layers are integral parts of many metal interconnect systems. Electromigration in multielement material systems or alloys, both in liquid and solid states, have been studied for several decades 3234.
Basic integrated circuit manufacturing 22 integrated circuitengineering corporation silicon 25. It was shown at the workshop that pecvd sinx effectively stops cu diffusion, and that in a 0. Another use of metallization is to produce metalized areas called bonding pads around the periphery of the chip to. Analysis of ni cu metallization to investigate an adhesive front contact for crystallinesilicon solar cells article pdf available in journal of the optical society of korea 193. However, in the gas lower electric field, the heavier atoms are less effected by light sputter gas. A brief overview of various front side patterning techniques is presented. Study of pretreatment methods for vacuum metallization of. Metallization free download as powerpoint presentation. Metallization of plastics 2q10 free download as powerpoint presentation.
Ppt copper metallization technology powerpoint presentation. Beol interconnect innovations for improving performance. Given the high percentage of metal cost in cell processing and concerns due to increasing ag prices, alternative metallization schemes are being considered. Introduction to cybershield metallization processes, materials and design guidelines plating on plastic. Current status and advances in damascene electrodeposition 3 diffusion and surface adsorption rates of peg and sps is the crucial driving force for bottomup filling of very high aspect ratio structures. Reliable acid copper plating for metallization of pcb. Oxidation of copper during physical sputtering deposition. Ppt wafer fabrication powerpoint presentation free to.
Cybershield metallization of plastics presentation. Copper metallization technology is the property of its rightful owner. Damascene process steps damascene is an additive process firstly, the dielectric is deposited secondly, the dielectric is etched according to the defined photoresist pattern, and then barrier layer is deposited thirdly, copper is deposited optimum way of copper deposition is electroplating copper electrodeposition is a two step process. Metallization snpbhasl, organic, cu niau, immersion sn or ag or au 6. Notice much more uniform intermetallic formation than seen in figure 7. Ald of copper and copper oxide thin films for applications. Barrier layers for cu ulsi metallization springerlink. Metallization is the final step in the wafer fabrication sequence.
Two types of thin film dielectric film cvd process oxide nitride epitaxial silicon conducting film pvd process aluminum alloy ti, tin silicides copper. Chapter 2 introduction of ic fabrication is the property of its rightful owner. Our approach for cu ald ald results on ta, tan, ru and sio. Metals having low reactivity show little affinity for air, moisture, carbon dioxide or other nonmetals present in nature. Introduction history characteristics uses and applications characteristics of alloys ul. Review of ni cu based front side metallization for csi. Ni cu based front side metallization offers potential advantages of finer grid lines, lower series resistance, and reduced costs.
Metallization is the process by which the components of ics are interconnected by aluminium conductor. Copper metallization technology powerpoint ppt presentation. The second type was carried out in a plasma2 treatment installation with rf. Damascene process and chemical mechanical planarization. Unique behavior or electromigration in solder joints 3. Ald of copper and copper oxide thin films for applications in metallization systems of ulsi devices.
The process is carried out in a vacuum chamber at high vacuum 106 torr using a cathodic arc source. Pdf analysis of nicu metallization to investigate an. If so, share your ppt presentation slides online with. Pdf 22nm cmos approaches by pvd tin or tisilicide as. Physical vapour deposition pvd is a process used to produce a metal vapour that can be deposited on electrically conductive materials as a thin, highly adhered pure metal or alloy coating. Metal with high conductivity is widely used for interconnection forming microelectronic circuit. Metallization is a process of adding a layer of metal on the surface of wafer. Metallization of plastics 2q10 printed circuit board. As the structure size in electronics such as integrated circuits ics. They melt in the palm of the hand metals have high boiling points. Metallization processes, materials and design guidelines plating on plastic. Comparison of conventional metallization process with damascene process 2.
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